參數資料
型號： MWI75-06A7
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： MWI75-06A7
中文描述： 90 A, 600 V, N-CHANNEL IGBT
封裝： SIXPACK-17
文件頁數： 1/4頁
文件大?。?/td> 189K
代理商： MWI75-06A7
2000 IXYS All rights reserved
1 - 4
MWI 75-06 A7
MWI 75-06 A7 T
0
IXYS reserves the right to change limits, test conditions and dimensions.
Features
G
NPT IGBT technology
G
low saturation voltage
G
low switching losses
G
switching frequency up to 30 kHz
G
square RBSOA, no latch up
G
high short circuit capability
G
positive temperature coefficient for
easy parallelling
G
MOS input, voltage controlled
G
ultra fast free wheeling diodes
G
solderable pins for PCB mounting
G
package with copper base plate
Advantages
G
space savings
G
reduced protection circuits
G
package designed for wave soldering
Typical Applications
G
AC motor control
G
AC servo and robot drives
G
power supplies
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
600
V
V
GES
20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
90
60
A
A
RBSOA
V
= 15 V; R
= 18 ; T
= 125°C
Clamped inductive load; L = 100 μH
I
CM
= 120
V
CEK
V
CES
A
t
(SCSOA)
V
= V
; V
GE
= 15 V; R
G
= 18 ; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
280
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25 C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
2.1
2.5
2.6
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 1.5 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
1.3
mA
mA
0.9
I
GES
V
CE
= 0 V; V
GE
= 20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
50
50
270
40
3.5
2.5
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 75 A
3200
190
pF
nC
R
thJC
(per IGBT)
0.44 K/W
Inductive load, T
= 125°C
V
CE
= 300 V; I
C
= 75 A
V
GE
= ±15 V; R
G
= 18
I
C25
V
CES
V
CE(sat) typ.
= 2.1 V
= 90 A
= 600 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Type
NTC - Option
MWI 75-06 A7
MWI 75-06 A7T
without NTC
with NTC
NTC
13
17
1
2
3
4
7
8
9
10
11
12
5
6
15
14
16
T
T
Preliminary Data
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相關代理商/技術參數
參數描述
MWI75-06A7T 功能描述:IGBT 模塊 75 Amps 600V RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
MWI75-12A5 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT Modules Sixpack
MWI75-12A8 功能描述:分立半導體模塊 IGBT MOD 1200V, 75A RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝:
MWI75-12A8T 功能描述:分立半導體模塊 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝:
MWI75-12E8 功能描述:分立半導體模塊 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝:
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