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參數(shù)資料
| 型號： | MWI50-12E6K |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 英文描述： | IGBT Module Sixpack |
| 中文描述： | IGBT模塊Sixpack |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 142K |
| 代理商： | MWI50-12E6K |
2004 IXYS All rights reserved
1 - 2
4
MWI 50-12 E6K
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Features
NPT
3
IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant
circuits
HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
AC drives
power supplies with power factor
correction
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
51
36
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 39
; T
= 125°C
RBSOA; clamped inductive load; L = 100 μH
70
V
CES
A
t
SC
V
= 900 V; V
=
±
15 V; R
G
= 39
; T
VJ
= 125°C
SCSOA; non-repetitive
10
μs
P
tot
T
C
= 25°C
210
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 35 A; V
GE
= 15 V; T
VJ
= 25°C
2.4
2.8
2.9
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V;
T
VJ
= 25°C
T
VJ
= 125°C
0.3
mA
mA
1.2
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
90
50
440
50
5.4
2.6
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 35 A
2000
150
pF
nC
R
thJC
R
thCH
(per IGBT)
0.6 K/W
0.2
K/W
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 35 A
V
GE
= ±15 V; R
G
= 39
I
C25
V
CES
V
CE(sat) typ.
= 2.4 V
= 51 A
= 1200 V
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
10, 23
9, 24
14
13
6
5
4
3
22
21
2
1
18
17
15, 16
11, 12
8
7
NTC
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參數(shù)描述 |
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