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參數(shù)資料
| 型號： | MWI150-06A8 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Modules |
| 中文描述： | 170 A, 600 V, N-CHANNEL IGBT |
| 封裝： | SIXPACK-33 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 980K |
| 代理商： | MWI150-06A8 |
2001 IXYS All rights reserved
1 - 2
Advanced Technical Information
MWI 150-06 A8
IXYS reserves the right to change limits, test conditions and dimensions.
1
Features
G
NPT IGBT technology
G
low saturation voltage
G
low switching losses
G
switching frequency up to 30 kHz
G
square RBSOA, no latch up
G
high short circuit capability
G
positive temperature coefficient for
easy parallelling
G
MOS input, voltage controlled
G
ultra fast free wheeling diodes
G
solderable pins for PCB mounting
G
package with copper base plate
Advantages
G
space savings
G
reduced protection circuits
G
package designed for wave soldering
Typical Applications
G
AC motor control
G
AC servo and robot drives
G
power supplies
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
600
V
V
GES
20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
170
115
A
A
RBSOA
V
= 15 V; R
= 1.5 ; T
= 125°C
Clamped inductive load; L = 100 μH
I
CM
= 300
V
CEK
V
CES
A
t
(SCSOA)
V
= V
; V
GE
= 15 V; R
G
= 1.5 ; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
515
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25 C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 150 A; V
GE
= 15 V; T
VJ
= 25°C
2.0
2.3
2.5
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 3 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
1.5
mA
mA
1.1
I
GES
V
CE
= 0 V; V
GE
= 20 V
400
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
125
30
225
35
2.3
4.6
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 150 A
6.5
tbd
nF
nC
R
thJC
(per IGBT) 0.24 K/W
Inductive load, T
= 125°C
V
CE
= 300 V; I
C
= 150 A
V
GE
= ±15 V; R
G
= 1.5
I
C25
V
CES
V
CE(sat) typ.
= 2.0 V
= 170 A
= 600 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
15
19
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|---|---|
| MWI200-06A8 | IGBT Modules |
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| MWI25-12A7T | IGBT Modules Sixpack |
| MWI35-12A7 | IGBT Modules |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MWI150-06A8T | 功能描述:分立半導(dǎo)體模塊 150 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI150-12T8T | 功能描述:分立半導(dǎo)體模塊 150 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI15-12A6K | 功能描述:分立半導(dǎo)體模塊 15 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI15-12A7 | 功能描述:分立半導(dǎo)體模塊 15 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI200-06A4 | 制造商:n/a 功能描述:IGBT Module |
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