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參數(shù)資料
| 型號： | MWE6IC9100GNR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/23頁 |
| 文件大?。?/td> | 888K |
| 代理商： | MWE6IC9100GNR1 |
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9100N wideband integrated circuit is designed with on-chip
matching that makes it usable from 869 to 960 MHz. This multi-stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Final
Application
Typical GSM Performance: V
DD
= 26 Volts, I
DQ1
= 120 mA, I
DQ2
= 950 mA,
P
out
= 100 Watts CW, Full Frequency Band (869-960 MHz)
Power Gain — 33.5 dB
Power Added Efficiency — 54%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 230 mA, I
DQ2
=
870 mA, P
out
= 50 Watts Avg., Full Frequency Band (869-960 MHz)
Power Gain — 35.5 dB
Power Added Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -81 dBc
EVM — 2% rms
Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 0 to 50.8 dBm CW (or
1 mW to 120 W CW) P
out
.
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
Integrated ESD Protection
200
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
Quiescent Current
Temperature Compensation
(1)
V
DS1
RF
in
V
GS1
V
GS2
V
DS1
RF
out
/V
DS2
Note: Exposed backside of the package is
the source terminal for the transistors.
NC
NC
NC
RF
in
RF
in
V
GS1
V
GS2
V
DS1
NC
RF
out
/V
DS2
1
2
3
4
5
7
8
9
10
11
12
14
V
DS1
NC
NC
RF
out
/V
DS2
13
6
(Top View)
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
960 MHz, 100 W, 26 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
MWE6IC9100NR1
MWE6IC9100GNR1
MWE6IC9100NBR1
CASE 1618-01
TO-270 WB-14
PLASTIC
MWE6IC9100NR1
CASE 1621-01
TO-270 WB-14 GULL
PLASTIC
MWE6IC9100GNR1
CASE 1617-01
TO-272 WB-14
PLASTIC
MWE6IC9100NBR1
Document Number: MWE6IC9100N
Rev. 2, 6/2007
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MWE6IC9100NBR1 | 功能描述:射頻放大器 100W 26V GSM RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MWE6IC9100NR1 | 功能描述:射頻放大器 100W 26V GSM RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MWE6IC9100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MWEB2L-128P-0J118 | 制造商:GLENAIR 制造商全稱:Glenair, Inc. 功能描述:MWEB Series EdgeBoard Connectors |
| MWEB2L-128P-0J218 | 制造商:GLENAIR 制造商全稱:Glenair, Inc. 功能描述:MWEB Series EdgeBoard Connectors |
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