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參數(shù)資料
| 型號： | MW7IC2425NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-272, CASE 1329-09, WB, 16 PIN |
| 文件頁數(shù)： | 15/21頁 |
| 文件大?。?/td> | 835K |
| 代理商： | MW7IC2425NBR1 |
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 2 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
Stage 2 - On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 80 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 195 mAdc) (1)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 195 mAdc) (1,2)
VGG(Q)
9.5
10.5
11.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 800 mAdc)
VDS(on)
0.15
0.47
0.8
Vdc
Stage 2 - Dynamic Characteristics (3)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
111
—
pF
Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(2) 50 ohm system) VDD = 28 Vdc, IDQ1 = 55 mA,
IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz
Power Gain
Gps
25.5
27.7
30.5
dB
Power Added Efficiency
PAE
41.5
43.8
—
%
Input Return Loss
IRL
—
-18
-10
dB
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps
25.5
28.5
30.5
dB
Power Added Efficiency
PAE
15
17
—
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
—
9
—
dB
Adjacent Channel Power Ratio
ACPR
—
-50
-46
dBc
Input Return Loss
IRL
—
-15
-10
dB
1. Measured in Freescale Narrowband Test Fixture.
2. See Appendix A for functional test fixture documentation.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MW7IC2425NR1 | 功能描述:射頻MOSFET電源晶體管 HV7 2400MHZ 4W TO270WB16G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW7IC2725GNR1 | 功能描述:射頻放大器 HV7 2700MHZ4W TO270WB16G RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW7IC2725N | 制造商:Freescale Semiconductor 功能描述: |
| MW7IC2725NBR1 | 功能描述:射頻放大器 HV7 2700MHZ 4W TO272WB16 RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW7IC2725NR1 | 功能描述:射頻放大器 HV7 2700MHZ 4W TO270WB16 RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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