參數(shù)資料
型號: MV200KP295CVCL
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 200000 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 2/3頁
文件大?。?/td> 190K
代理商: MV200KP295CVCL
AIRCRAFT AC POWER BUS PROTECTION
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
200KP295CVCL and 200KP295CA
200
KP295
CV
CL
and
200
KP295
CA
GRAPHS
Microsemi
Scottsdale Division
Page 2
Copyright
2004
8-08-2004 REV B
tp – Pulse Time – sec.
TL Lead Temperature oC
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
DERATING CURVE
To 50% of Exponentially Decaying Pulse
Correct
Wrong
FIGURE 3
FIGURE 5
Peak
Pulse
Power
(P
PP
)or
cont
inuous
Power
in
%
o
f25
o C
ratin
g
INSTALLATION
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the mounting
leads. Minimizing the shunt path of the lead
inductance and their V= -Ldi/dt effects will
optimize the TVS effectiveness. Examples
of optimum installation and poor installation
are illustrated in figures 3 through figure 6.
Figure
3
illustrates
minimal
parasitic
inductance with attachment at end of device.
Inductive voltage drop is across input leads.
Virtually no “overshoot” voltage results as
illustrated with figure 4.
The loss of
effectiveness
in
protection
caused
by
excessive parasitic inductance is illustrated
in figures 5 and 6. Also see MicroNote 111
for further information on “Parasitic Lead
Inductance in TVS”.
NOTE: This PPP vs. Time graph allows the designer to use these
parts over a broad power spectrum using the guidelines illustrated
in App Note 104 on Microsemi’s website. Aircraft transients are
described with exponential decaying waveforms. For suppression
of square waveforms, derate power and current to 66% of that for
exponential decay.
P
PP
Peak
Pulse
Power
vs.
Pulse
Time
kW
Non-Re
petitive
Pulse
FIGURE 4
FIGURE 6
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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