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參數(shù)資料
| 型號： | MV1N5768 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, DFP-10 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 79K |
| 代理商： | MV1N5768 |
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5768
DESCRIPTION
APPEARANCE
These low capacitance diode arrays with common cathode are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 10-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them to the positive side of the power supply line (see figure 1). This circuit application is
further complimented by the 1N5770 (separate data sheet) that has a common anode.
An external TVS diode may be added between the positive supply line and ground to
prevent overvoltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as magnetic
cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arrays offer many advantages of integrated circuits such as high-
density packaging and improved reliability.
This is a result of fewer pick and place
operations, smaller footprint, smaller weight, and elimination of various discrete
packages that may not be as user friendly in PC board mounting.
10-PIN Ceramic
Flat Pack
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 4.0 pF
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N5768 for a JANTX screen.
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20
μs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
VBR Reverse Breakdown Voltage 60 V min (Notes 1 & 2)
IO Continuous Forward Current 300 mA (Notes 1 & 3)
IFSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
400 mW Power Dissipation per Junction @ 25
oC
500 mW Power Dissipation per Package @ 25
oC (Note 4)
Operating Junction Temperature range –65 to +150
oC
Storage Temperature range of –65 to +200
oC
10-PIN Ceramic Flat Pack
Weight 0.25 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
Carrier Tubes; 19 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/
oC above +25oC
NOTE 4: Derate at 4.0 mW/
oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
MAXIMUM
FORWARD
VOLTAGE
VF2
IF = 500 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY TIME
tfr
IF = 500 mA
MAXIMUM
REVERSE
RECOVERY TIME
trr
IF = IR = 200 mA
irr = 20 mA
RL = 100 ohms
PART
NUMBER
Vdc
μAdc
pF
ns
1N5768
1
1.5
0.1
4.0
40
20
NOTE 1: Pulsed: PW = 300 s +/- 50 s, duty cycle <2%, 90 s after leading edge.
Microsemi
Scottsdale Division
Page 1
Copyright
2006
01-24-2006 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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