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參數(shù)資料
| 型號： | MURS260-E3/5BT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | MURS260-E3/5BT |
New Product
MURS240 & MURS260
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88971
Revision: 13-May-08
2
Notes:
(1) Pulse test: tp = 300 s, duty cycle ≤ 2 %
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Units mounted on P.C.B. with 30 mm x 30 mm copper pad areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MURS240
MURS260
UNIT
Maximum instantaneous forward
voltage (1)
IF = 2.0 A
TJ = 25 °C
TJ = 125 °C
VF
1.45
1.20
V
Maximum instantaneous reverse
current (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
5.0
150
A
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
50
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/s,
VR = 30 V, Irr = 10 % IRM
trr
75
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/s,
recovery to 1.0 V
tfr
50
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS240
MURS260
UNIT
Typical thermal resistance junction to lead
RθJL
15
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MURS240-E3/52T
0.093
52T
750
7" diameter plastic tape and reel
MURS240-E3/5BT
0.093
5BT
3200
13" diameter plastic tape and reel
MURS240HE3/52T (1)
0.093
52T
750
7" diameter plastic tape and reel
MURS240HE3/5BT (1)
0.093
5BT
3200
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
3.0
2.0
1.0
0
25
50
75
100
125
150
175
A
v
er
age
F
o
rw
ard
Re
ctified
C
u
rrent
(A)
Lead Temperature (°C)
Figure 2. Forward Power Loss Characteristics
0
0.5
1.0
1.5
2.0
2.5
2.0
1.5
1.0
0.5
0
A
v
er
age
P
o
w
er
Loss
(
W
)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
相關PDF資料 |
PDF描述 |
|---|---|
| MURS260-E3/52T | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS260HE3/5BT | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS320T3 | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MURS340-E3/9AT | 4 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
| MURS340-HE3/57T | 4 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MURS260HE3/2CT | 功能描述:整流器 600 Volt 2.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS260HE3/52T | 功能描述:整流器 600 Volt 2.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS260HE3/55T | 功能描述:整流器 600 Volt 2.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS260HE3/5BT | 功能描述:整流器 600 Volt 2.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS260-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:2A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER |
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