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參數(shù)資料
| 型號： | MURS150 |
| 廠商： | Diodes Inc. |
| 英文描述： | 1.0A SURFACE MOUNT SUPER-FAST RECTIFIER |
| 中文描述： | 安培表面貼裝超快速整流 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MURS150 |
DS30130 Rev. 5 - 2
1 of 3
MURS140 - MURS160
MURS140 - MURS160
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 35A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Mechanical Data
Case: Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Marking: MURS140: U1GB
MURS160: U1JB
Polarity: Cathode Band or Cathode Notch
Weight: 0.093 grams (approx.)
Mounting Position: Any
Ordering Information: See Page 3
Notes:
1. Unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 0V DC.
3. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
4. Measured with I
F
= 1.0A, di/dt = 100A/ s, Duty Cycle
2.0%
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
MURS140
MURS160
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
400
600
V
283
424
V
@ T
T
= 150 C
@ T
T
= 125 C
I
O
1.0
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage @ I
F
= 1.0A, T
J
= 25°C
I
FSM
35
A
@ I
F
= 1.0A, T
J
= 150°C
@ T
A
= 25 C
@ T
A
= 150 C
V
FM
1.25
1.05
5.0
150
50
50
45
13
V
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Forward Recovery Time (Note 4)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance, Junction to Terminal (Note 1)
Operating and Storage Temperature Range
I
RM
A
t
rr
t
fr
C
j
ns
ns
pF
K/W
C
R
JT
T
j
, T
STG
-65 to +175
A
B
C
D
G
H
E
J
SMB
Min
Dim
A
B
C
D
E
G
H
J
All Dimensions in mm
Max
3.30
3.94
4.06
4.57
1.96
2.21
0.15
0.31
5.00
5.59
0.10
0.20
0.76
1.52
2.00
2.62
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS150T3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MURS160 | 制造商:PDD 功能描述:ULTRA FAST 600V SMD (Surface Mount) Rectifier SMB 1A 制造商:PDD 功能描述:ULTRA FAST 600V SMD (Surface Mount) Rectifier SMB 1A - free partial T/R at 500. 制造商:ON 功能描述:1A 600V |
| MURS160/1T | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS160/2 | 功能描述:DIODE FAST 1A 600V SMB RoHS:否 類別:分離式半導體產(chǎn)品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MURS160/2BT | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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