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參數(shù)資料
| 型號： | MURD550PF |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | SWITCHMODE Power Rectifier(開關模式功率整流管) |
| 中文描述： | 開關模式電源整流器（開關模式功率整流管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | MURD550PF |
MUR550APF, MURD550PF, MUR550PF
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
I
F(AV)
520
V
Average Rectified Forward Current
(Rated V
R
) T
C
= 65
°
C
(Rated V
R
) T
C
= 160
°
C
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
MUR550APF
MURD550PF, MUR550PF
5.0
A
MUR550APF
MURD550PF
MUR550PF
I
FSM
85
75
100
A
Operating Junction Temperature Range
T
J
T
stg
ESD
65 to +175
°
C
°
C
Storage Temperature Range
65 to +175
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
>8000
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, JunctiontoCase (Note 1)
MURD550PF, MUR550PF
R
JC
2.8
°
C/W
Thermal Resistance, JunctiontoAmbient
MUR550APF
MURD550PF (Note 3)
R
JA
Note 2
62
°
C/W
1. Rating applies when surface mounted on the minimum pad sizes recommended.
2. See Note 2, Ambient Mounting Data.
3. 1 inch square pad size on FR4 board.
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage Drop (Note 4)
(I
F
= 5.0 A, T
J
= 25
°
C)
(I
F
= 5.0 A, T
J
= 150
°
C)
V
F
1.15
0.98
V
Maximum Instantaneous Reverse Current (Note 4)
(V
R
= 520 V, T
J
= 25
°
C)
(V
R
= 520 V, T
J
= 150
°
C)
I
R
5.0
400
A
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ s, V
R
= 30 V, T
J
= 25
°
C)
4. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
t
rr
95
ns
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