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參數(shù)資料
| 型號： | MUR2100E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifier(開關(guān)模式功率整流管) |
| 中文描述： | 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 58K |
| 代理商： | MUR2100E |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 5
1
Publication Order Number:
MUR2100E/D
MUR2100E
Preferred Device
SWITCHMODE
Power Rectifier
Ultrafast “E” Series with High Reverse
Energy Capability
These stateoftheart devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
20 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175
°
C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
These are PbFree Devices*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220
°
C Max for 10 Seconds, 1/16
″
from Case
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
I
F(AV)
1000
V
Average Rectified Forward Current (Note 1)
2.0 @
T
A
= 35
°
C
35
A
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
I
FSM
A
Operating Junction Temperature and
Storage Temperature Range
T
J
, T
stg
65 to +175
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance,
JunctiontoAmbient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
R
JA
(Note 1)
°
C/W
Device
Package
Shipping
ORDERING INFORMATION
MUR2100ERL
Axial Lead*
5000/Tape & Reel
MUR2100E
Axial Lead*
1000 Units/Bag
ULTRAFAST RECTIFIER
2 AMPS, 1000 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MUR2100EG
Axial Lead*
1000 Units/Bag
MUR2100ERLG
Axial Lead*
5000/Tape & Reel
PLASTIC
AXIAL LEAD
CASE 59
MARKING DIAGRAM
A
Y
WW = Work Week
= PbFree Package
(Note: Microdot may be in either location)
= Assembly Location
= Year
A
MUR2100E
YYWW
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUR2100E/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SWITCHMODE? Power Rectifier |
| MUR2100EG | 功能描述:整流器 1000V 2A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR2100EG | 制造商:ON Semiconductor 功能描述:Ultra Fast Recovery Power Rectifier |
| MUR2100ERL | 功能描述:整流器 1000V 2A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR2100ERLG | 功能描述:整流器 1000V 2A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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