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參數(shù)資料
| 型號： | MUR160-E3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MUR160-E3/54 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88684
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Oct-09
MUR140, MUR160
Vishay General Semiconductor
New Product
Note
(1) Pulse test: 300 μs pulse width, duty cycle
≤ 2 %
Note
(1) Lead length = 3/8" on P.C.B. with 1.5" x 1.5" (38.1 mm x 38.1 mm) copper surface
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MUR140
MUR160
UNIT
Maximum instantaneous
forward voltage
IF = 1.0 A
TJ = 25 °C
VF (1)
1.25
V
TJ = 150 °C
1.05
Maximum instantaneous
reverse current at rated DC
blocking voltage
TJ = 25 °C
IR (1)
5.0
μA
TJ = 150 °C
150
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
50
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
trr
75
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
tfr
50
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MUR140
MUR160
UNIT
Typical thermal resistance, junction to ambient
RθJA
(1)
50
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MUR160-E3/54
0.41
54
4000
13" diameter paper tape and reel
MUR160-E3/73
0.41
73
2000
Ammo pack packaging
0
2.0
3.0
0
25
50
75
100
125
150
175
1.0
A
v
erage
Forwar
d
Rectified
Curr
ent
(A)
Ambient Temperature (°C)
P.C.B. with 1.5" x 1.5"
(38.1 mm x 38.1 mm)
Copper Pads
L = 3/8"
0
10
20
30
40
50
1
100
10
Number of Cycles at 50 Hz
Peak
Forwar
d
S
ur
ge
Curr
ent
(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUR160-E3/73 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC |
| MUR140-E3/54 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC |
| MUR140 | SILICON, RECTIFIER DIODE, DO-41 |
| MUR410 | 4 A, SILICON, RECTIFIER DIODE, DO-201AD |
| MUR440 | 4 A, SILICON, RECTIFIER DIODE, DO-201AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUR160G | 功能描述:整流器 600V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR160G | 制造商:ON Semiconductor 功能描述:ULTRA FAST RECOVERY POWER RECTIFIER |
| MUR160GP | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:1.0 Amp Glass Passivated Super Fast Recovery Rectifier 50 to 600 Volts |
| MUR160GP-TP | 功能描述:DIODE RECT GPP 1A 600V V DO-41 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MUR160-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:1A ULTRA FAST EFFICIENT RECTIFIER |
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