參數(shù)資料
型號(hào): MUR1520CT
元件分類: 整流器
英文描述: 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: TO-220AC, 3 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 657K
代理商: MUR1520CT
MUR1520, MURB1520, MURB1520-1
Bulletin PD-20727 rev. D 11/04
2
www.irf.com
VBR, Vr
Breakdown Voltage,
200
-
V
IR = 100A
Blocking Voltage
VF
Forward Voltage
-
1.05
V
IF = 15A
-
0.85
V
IF = 15A, TJ = 150°C
IR
Reverse Leakage Current
-
10
A
VR = VR Rated
-
500
A
TJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
55
-
pF
VR = 200V
LS
Series Inductance
-
8.0
-
nH
.
Parameters
Min
Typ
Max
Units
TJ
Max. Junction Temperature Range
-
- 65 to 175
°C
TStg
Max. Storage Temperature Range
-
- 65 to 175
RthJC
Thermal Resistance, Junction to Case
-
1.5
°C/ W
RthJA
Thermal Resistance, Junction to Ambient
-
50
RthCS
Thermal Resistance, Case to Heatsink
-
0.5
-
Wt
Weight
-
2.0
-
g
-
0.07
-
(oz)
Mounting Torque
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Thermal - Mechanical Characteristics
trr
Reverse Recovery Time
--
35
ns
IF = 1.0A, diF/dt = 50A/s, VR = 30V
-22
-
TJ = 25°C
-39
-
TJ = 125°C
IRRM
Peak Recovery Current
-
1.6
-
A
TJ = 25°C
-
4.1
-
TJ = 125°C
Qrr
Reverse Recovery Charge
-
19
-
nC
TJ = 25°C
-90
-
TJ = 125°C
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
I
F = 15A
VR = 160V
diF /dt = 200A/s
Mounting Surface, Flat, Smooth and Greased
Parameters
Min Typ Max Units Test Conditions
Parameters
Min Typ Max Units Test Conditions
Measured lead to lead 5mm from package body
相關(guān)PDF資料
PDF描述
MURB1520CT 15 A, 200 V, SILICON, RECTIFIER DIODE
MURB1520CT-1PBF 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
MUR1520CTPBF 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
MUR1610CT-BP 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MUR1620CT-BP 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
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