參數(shù)資料
型號: MUR140-E3/54
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC
封裝: ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 65K
代理商: MUR140-E3/54
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88684
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Oct-09
MUR140, MUR160
Vishay General Semiconductor
New Product
Note
(1) Pulse test: 300 μs pulse width, duty cycle
≤ 2 %
Note
(1) Lead length = 3/8" on P.C.B. with 1.5" x 1.5" (38.1 mm x 38.1 mm) copper surface
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MUR140
MUR160
UNIT
Maximum instantaneous
forward voltage
IF = 1.0 A
TJ = 25 °C
VF (1)
1.25
V
TJ = 150 °C
1.05
Maximum instantaneous
reverse current at rated DC
blocking voltage
TJ = 25 °C
IR (1)
5.0
μA
TJ = 150 °C
150
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
50
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
trr
75
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
tfr
50
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MUR140
MUR160
UNIT
Typical thermal resistance, junction to ambient
RθJA
(1)
50
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MUR160-E3/54
0.41
54
4000
13" diameter paper tape and reel
MUR160-E3/73
0.41
73
2000
Ammo pack packaging
0
2.0
3.0
0
25
50
75
100
125
150
175
1.0
A
v
erage
Forwar
d
Rectified
Curr
ent
(A)
Ambient Temperature (°C)
P.C.B. with 1.5" x 1.5"
(38.1 mm x 38.1 mm)
Copper Pads
L = 3/8"
0
10
20
30
40
50
1
100
10
Number of Cycles at 50 Hz
Peak
Forwar
d
S
ur
ge
Curr
ent
(A)
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