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參數(shù)資料
| 型號： | MUR120-E3/73 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 62K |
| 代理商： | MUR120-E3/73 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88683
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Oct-09
MUR120
Vishay General Semiconductor
Note
(1) Pulse test: tp = 300 μs pulse, duty cycle
≤ 2 %
Note
(1) Lead length = 3/8" on P.C.B. with 1.5" x 1.5" (38.1 mm x 38.1 mm) copper surface
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MUR120
UNIT
Maximum instantaneous
forward voltage
1.0 A
TJ = 25 °C
VF (1)
0.875
V
TJ = 150 °C
0.710
Maximum instantaneous reverse
current at rated DC blocking voltage
TJ = 25 °C
IR (1)
2.0
μA
TJ = 150 °C
50
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
25
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
trr
35
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/μs, Irec to 1.0 V
tfr
25
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MUR120
UNIT
Typical thermal resistance junction to ambient
RθJA
(1)
27
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MUR120-E3/54
0.41
54
4000
13" diameter paper tape and reel
MUR120-E3/73
0.41
73
2000
Ammo pack packaging
0
2.0
3.0
0
25
50
75
100
125
150
175
1.0
A
v
erage
Forwar
d
Rectified
Curr
ent
(A)
Ambient Temperature (°C)
0
10
20
30
40
50
1
100
10
Number of Cycles at 60 Hz
Peak
Forwar
d
S
ur
ge
Curr
ent
(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUR140-E3/73 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC |
| MUR160-E3/54 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC |
| MUR160-E3/73 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC |
| MUR140-E3/54 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC |
| MUR140 | SILICON, RECTIFIER DIODE, DO-41 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUR120FF | 功能描述:整流器 200V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR120FFG | 功能描述:整流器 200V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR120G | 功能描述:整流器 200V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR120G | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 1A 200V AXIAL 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE, 1A, 200V AXIAL |
| MUR120GP | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:1.0 Amp Glass Passivated Super Fast Recovery Rectifier 50 to 600 Volts |
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