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參數(shù)資料
| 型號(hào)： | MUR110 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifiers(開(kāi)關(guān)模式功率整流管) |
| 中文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | MUR110 |
MUR120 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR
Unit
105
110
115
120
130
140
160
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
R
50
100
150
200
300
400
600
V
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
I
F(AV)
1.0 @ T
A
= 130
°
C
1.0 @ T
A
= 120
°
C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
I
FSM
35
A
Operating Junction Temperature and Storage Temperature
T
J
, T
stg
65 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characterisic
Symbol
Max
Unit
Maximum Thermal Resistance, JunctiontoAmbient
R
JA
Note 2
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 Amp, T
J
= 150
°
C)
(i
F
= 1.0 Amp, T
J
= 25
°
C)
v
F
0.710
0.875
1.05
1.25
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
J
= 150
°
C)
(Rated DC Voltage, T
J
= 25
°
C)
i
R
50
2.0
150
5.0
A
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ s)
(I
F
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
t
rr
35
25
75
50
ns
Maximum Forward Recovery Time
(I
F
= 1.0 A, di/dt = 100 A/ s, I
REC
to 1.0 V)
1. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
t
fr
25
50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUR105 | SWITCHMODE Power Rectifiers(開(kāi)關(guān)模式功率整流管) |
| MUR130 | SWITCHMODE Power Rectifiers(開(kāi)關(guān)模式功率整流管) |
| MUR140 | SWITCHMODE Power Rectifiers(開(kāi)關(guān)模式功率整流管) |
| MUR160 | SWITCHMODE Power Rectifiers(開(kāi)關(guān)模式功率整流管) |
| MUR115 | SWITCHMODE Power Rectifiers(開(kāi)關(guān)模式功率整流管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUR1100 | 制造商:BILIN 制造商全稱(chēng):Galaxy Semi-Conductor Holdings Limited 功能描述:HIGH EFFICIENCY RECTIFIER |
| MUR1100E | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR1100EG | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR1100EG | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 1A 1KV AXIAL |
| MUR1100ERL | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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