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參數(shù)資料
| 型號： | MUR1100E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | TIP REPL BEVEL .016 SP200-500 |
| 中文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MUR1100E |
4
Rectifier Device Data
MERCURY
SWITCH
VD
ID
DUT
40 mH COIL
+VDD
IL
S1
BVDUT
IL
ID
VDD
t0
t1
t2
t
Figure 6. Test Circuit
Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A mercury
switch was used instead of an electronic switch to simulate a
noisy environment when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch is
opened and the voltage across the diode under test begins to
rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1 is
opened; and calculating the energy that is transferred to the
diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite com-
ponent resistances. Assuming the component resistive ele-
ments are small Equation (1) approximates the total energy
transferred to the diode. It can be seen from this equation
that if the VDD voltage is low compared to the breakdown
voltage of the device, the amount of energy contributed by
the supply during breakdown is small and the total energy
can be assumed to be nearly equal to the energy stored in
the coil during the time when S1 was closed, Equation (2).
The oscilloscope picture in Figure 8, shows the information
obtained for the MUR8100E (similar die construction as the
MUR1100E Series) in this test circuit conducting a peak cur-
rent of one ampere at a breakdown voltage of 1300 volts,
and using Equation (2) the energy absorbed by the
MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this condi-
tion, the new “E’’ series provides added protection against
those unforeseen transient viruses that can produce unex-
plained random failures in unfriendly environments.
WAVAL
1
2LI2
LPK
BVDUT
BVDUT–VDD
WAVAL
1
2LI2
LPK
Figure 8. Current–Voltage Waveforms
CHANNEL 2:
IL
0.5 AMPS/DIV.
CHANNEL 1:
VDUT
500 VOLTS/DIV.
TIME BASE:
20 s/DIV.
EQUATION (1):
EQUATION (2):
CH1
CH2
REF
REF
CH1
CH2
ACQUISITIONS
SAVEREF SOURCE
1
217:33 HRS
STACK
A
20 s
953 V
VERT
500V
50mV
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| MUR1100EG | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR1100EG | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 1A 1KV AXIAL |
| MUR1100ERL | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR1100ERLG | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MUR1100-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:1A ULTRA FAST EFFICIENT RECTIFIER |
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