參數(shù)資料
型號: MUR105
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Power Rectifiers(開關(guān)模式功率整流管)
中文描述: 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
封裝: LEAD FREE, PLASTIC, CASE 59-10, 2 PIN
文件頁數(shù): 2/7頁
文件大小: 68K
代理商: MUR105
MUR120 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR
Unit
105
110
115
120
130
140
160
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
R
50
100
150
200
300
400
600
V
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
I
F(AV)
1.0 @ T
A
= 130
°
C
1.0 @ T
A
= 120
°
C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
I
FSM
35
A
Operating Junction Temperature and Storage Temperature
T
J
, T
stg
65 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characterisic
Symbol
Max
Unit
Maximum Thermal Resistance, JunctiontoAmbient
R
JA
Note 2
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 Amp, T
J
= 150
°
C)
(i
F
= 1.0 Amp, T
J
= 25
°
C)
v
F
0.710
0.875
1.05
1.25
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
J
= 150
°
C)
(Rated DC Voltage, T
J
= 25
°
C)
i
R
50
2.0
150
5.0
A
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ s)
(I
F
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
t
rr
35
25
75
50
ns
Maximum Forward Recovery Time
(I
F
= 1.0 A, di/dt = 100 A/ s, I
REC
to 1.0 V)
1. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
t
fr
25
50
ns
相關(guān)PDF資料
PDF描述
MUR130 SWITCHMODE Power Rectifiers(開關(guān)模式功率整流管)
MUR140 SWITCHMODE Power Rectifiers(開關(guān)模式功率整流管)
MUR160 SWITCHMODE Power Rectifiers(開關(guān)模式功率整流管)
MUR115 SWITCHMODE Power Rectifiers(開關(guān)模式功率整流管)
MUR120 SWITCHMODE Power Rectifiers(開關(guān)模式功率整流管)
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