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參數(shù)資料
| 型號(hào)： | MUN5213T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁數(shù)： | 3/39頁 |
| 文件大?。?/td> | 377K |
| 代理商： | MUN5213T3 |
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6–3
Tape and Reel Specifications
Motorola Small–Signal Transistors, FETs and Diodes Device Data
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
P0
K
t
B1
K0
Top Cover
Tape
Embossment
User Direction of Feed
Center Lines
of Cavity
D
P2
10 Pitches Cumulative Tolerance on Tape
± 0.2 mm
(
± 0.008″)
E
F
W
P
B0
A0
D1
For Components
2.0 mm x 1.2 mm and Larger
* Top Cover Tape
Thickness (t1)
0.10 mm
(.004
″) Max.
Embossment
Embossed Carrier
R Min
Bending Radius
Maximum Component Rotation
Typical Component
Cavity Center Line
Typical Component
Center Line
100 mm
(3.937
″)
250 mm
(9.843
″)
1 mm
(.039
″) Max
1 mm Max
10
°
Tape and Components
Shall Pass Around Radius “R”
Without Damage
Tape
For Machine Reference Only
Including Draft and RADII
Concentric Around B0
Camber (Top View)
Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
See
Note 1
Bar Code Label
DIMENSIONS
Tape
Size
B1 Max
D
D1
E
F
K
P0
P2
R Min
T Max
W Max
8mm
4.55 mm
(.179
″)
1.5 +0.1mm
– 0.0
( 0 9 + 004
1.0 Min
(.039
″)
1.75
± 0.1mm
(.069
± .004″)
3.5
± 0.05 mm
(.138
± .002″)
2.4 mm Max
(.094
″)
4.0
± 0.1mm
(.157
± .004″)
2.0
± 0.1mm
(.079
± .002″)
25 mm
(.98
″)
0.6mm
(.024
″)
8.3 mm
(.327
″)
12 mm
8.2 mm
(.323
″)
(.059+ .004
″
– 0.0)
1.5 mm Min
(.060
″)
5.5
± 0.05 mm
(.217
± .002″)
6.4 mm Max
(.252
″)
30 mm
(1.18
″)
12
± .30 mm
(.470
± .012″)
16 mm
12.1 mm
(.476
″)
7.5
± 0.10 mm
(.295
± .004″)
7.9 mm Max
(.311
″)
16.3 mm
(.642
″)
24 mm
20.1 mm
(.791
″)
11.5
± 0.1 mm
(.453
± .004″)
11.9 mm Max
(.468
″)
24.3 mm
(.957
″)
Metric dimensions govern — English are in parentheses for reference only.
NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,
NOTE 1: the component cannot rotate more than 10
° within the determined cavity.
NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.
NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 5.12–3.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5213TI | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MUN5214 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor |
| MUN5214DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Dual Bias Resistor Transistor |
| MUN5214DW1T1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5214DW1T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 SS BR XSTR NPN 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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