參數(shù)資料
型號: MUN22xxT1
廠商: ON SEMICONDUCTOR
英文描述: NPN SILICON BIAS RESISTOR TRANSISTOR
中文描述: NPN硅偏置電阻晶體管
文件頁數(shù): 4/12頁
文件大?。?/td> 263K
代理商: MUN22XXT1
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2211T1
V
I
h
Figure 2. VCE(sat) versus IC
10
0
20
30
IC, COLLECTOR CURRENT (mA)
10
1
0.1
VO = 0.2 V
TA= –25
°
C
75
°
C
25
°
C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.0010
20
40
60
80
IC, COLLECTOR CURRENT (mA)
V
1000
100
101
10
100
IC, COLLECTOR CURRENT (mA)
TA= 75
°
C
25
°
C
–25
°
C
TA= –25
°
C
25
°
C
75
°
C
IC/IB = 10
Figure 5. Output Current versus Input Voltage
75
°
C
25
°
C
TA= –25
°
C
100
10
1
0.1
0.01
0.0010
1
2
3
4
Vin, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 6. Input Voltage versus Output Current
50
0
10
20
30
40
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25
°
C
VO = 5 V
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