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參數(shù)資料
| 型號： | MUN2236T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, CASE 318D-04, SC-59, 3 PIN |
| 文件頁數(shù)： | 12/18頁 |
| 文件大?。?/td> | 160K |
| 代理商： | MUN2236T1G |
MUN2211T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector‐Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
-
100
nAdc
Collector‐Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
-
500
nAdc
Emitter‐Base Cutoff Current
MUN2211T1, G
(VEB = 6.0 V, IC = 0)
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
IEBO
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
mAdc
Collector‐Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
-
Vdc
Collector‐Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
-
Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
MUN2211T1, G
(VCE = 10 V, IC = 5.0 mA)
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
hFE
35
60
80
160
3.0
8.0
15
80
160
60
100
140
350
5.0
15
30
200
150
140
350
-
Collector‐Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2233T1, G
MUN2236T1, G
(IC = 10 mA, IB = 5 mA)
MUN2230T1, G
MUN2231T1, G
MUN2237T1, G
MUN2241T1, G
(IC = 10 mA, IB = 1 mA)
MUN2215T1, G
MUN2216T1, G
MUN2232T1, G
MUN2234T1, G
MUN2240T1, G
VCE(sat)
-
0.25
Vdc
4. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%.
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