參數(shù)資料
型號: MUN2116T3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-59, 3 PIN
文件頁數(shù): 34/38頁
文件大?。?/td> 385K
代理商: MUN2116T3
MUN2111T1 SERIES
2–735
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2112T1
V
in
,INPUT
VOL
TAGE
(VOL
TS)
I C
,COLLECT
OR
CURRENT
(mA)
h
FE
,DC
CURRENT
GAIN
(NORMALIZED)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1
100
TA =75°C
–25
°C
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0
10
20
30
VO = 0.2 V
TA = –25°C
75
°C
100
10
1
0.1
40
50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0
12
3
4
Vin, INPUT VOLTAGE (VOLTS)
25
°C
TA = –25°C
567
8
9
10
Figure 11. Input Voltage versus Output Current
0.01
V
CE(sat)
,MA
X
IM
U
M
COLLECT
OR
V
OL
TA
G
E
(V
OL
TS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
020
60
80
75
°C
25
°C
TA = –25°C
50
010
20
30
40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,CAP
ACIT
ANCE
(pF
)
25
°C
VCE = 10 V
IC/IB = 10
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
25
°C
75
°C
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