參數(shù)資料
型號(hào)： MUBW50-06A7
英文描述： Industrial Control IC
中文描述： 工業(yè)控制IC
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 189K
代理商： MUBW50-06A7
2001 IXYS All rights reserved
2 - 8
MUBW 50-06 A7
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
= 125
°
C)
V
0
= 1.0 V; R
0
= 12 m
T1 - T6 / D1 - D6
IGBT (typ. at V
= 15 V; T
= 125
°
C)
V
0
= 0.82 V; R
0
= 28 m
Free Wheeling Diode (typ. at T
J
= 125
°
C)
V
0
= 0.89 V; R
0
= 8 m
T7 / D7
IGBT (typ. at V
= 15 V; T
= 125
°
C)
V
0
= 0.9 V; R
0
= 65 m
Free Wheeling Diode (typ. at T
J
= 125
°
C)
V
0
= 1.07 V; R
0
= 23 m
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.131 J/K; R
th1
= 0.851 K/W
C
th2
= 0.839 J/K; R
th2
= 0.209 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.221 J/K; R
th1
= 0.382 K/W
C
th2
= 1.377 J/K; R
th2
= 0.119 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.116 J/K; R
th1
= 0.973 K/W
C
th2
= 0.88 J/K; R
th2
= 0.217 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.108 J/K; R
th1
= 0.79 K/W
C
th2
= 0.921 J/K; R
th2
= 0.209 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
Output Inverter T1 - T6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25
°
C to 150
°
C
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C80
T
C
= 25
°
C
T
C
= 80
°
C
75
50
A
A
RBSOA
V
GE
=
±
15 V; R
= 22
; T
VJ
= 125
°
C
Clamped inductive load; L = 100 μH
I
CM
= 100
V
CEK
≤
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 22
; T
VJ
= 125
°
C
non-repetitive
10
μs
P
tot
T
C
= 25
°
C
250
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25
°
C
1.9
2.2
2.4
V
V
T
VJ
= 125
°
C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25
°
C
T
VJ
= 125
°
C
0.8
mA
mA
0.7
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
50
55
300
30
2.3
1.7
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 50 A
2800
120
pF
nC
R
thJC
(per IGBT)
0.5 K/W
Inductive load, T
= 125
°
C
V
CE
= 300 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 22
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25
°
C
T
C
= 80
°
C
72
45
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25
°
C
1.8
V
V
T
VJ
= 125
°
C
1.3
I
RM
t
rr
I
F
= 25 A; di
/dt = -500 A/μs; T
VJ
= 125
°
C
V
R
= 300 V; V
GE
= 0 V
25
90
A
ns
R
thJC
(per diode)
1.19 K/W
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參數(shù)描述
MUBW50-06A8 功能描述:分立半導(dǎo)體模塊 50 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MUBW50-12A8 功能描述:分立半導(dǎo)體模塊 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MUBW50-12E8 功能描述:分立半導(dǎo)體模塊 IGBT (NPT3) 1200V 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MUBW50-12T8 功能描述:分立半導(dǎo)體模塊 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MUBW50-17T8 功能描述:分立半導(dǎo)體模塊 50 Amps 1700V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
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