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參數(shù)資料
| 型號(hào)： | MUBW2512T7 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 45 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | MUBW2512T7 |
2 - 4
2006 IXYS All rights reserved
0619
MUBW 25-12 T7
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
I
F25
T
C =
25°C
25
A
I
F80
T
C =
80°C
17
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F = 25 A; VGE = 0 V;
T
VJ =
25°C
2.1
2.6
V
T
VJ = 125°C
1.6
V
I
RM
tbd
A
Q
rr
I
F = tbd A; diF/dt = -tbd A/s; TVJ = 125°C
tbd
C
t
rr
V
R = 600 V; VGE = 0 V
tbd
ns
E
rec
tbd
mJ
R
thJC
(per diode)
2.1 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE = 15 V; TJ = 125°C)
T1-T6
V
0 = 0.92 V; R0 = 42.8 m
T7
V
0 = 0.92 V; R0 = 72 m
Diode (typ. at T
J = 125°C)
D1-D6
V
0 = tbd V; R0 = tbd m
D7
V
0 = tbd V; R0 = tbd m
D11-D16
V
0 = tbd V; R0 = tbd m
Thermal Response
IGBT (typ.)
T1-T6
C
th1 = tbd J/K; Rth1 = tbd K/W
C
th2 = tbd J/K; Rth2 = tbd K/W
T7
C
th1 = tbd J/K; Rth1 = tbd K/W
C
th2 = tbd J/K; Rth2 = tbd K/W
Diode (typ.)
D1-D6
C
th1 = tbd J/K; Rth1 = tbd K/W
C
th2 = tbd J/K; Rth2 = tbd K/W
D7
C
th1 = tbd J/K; Rth1 = tbd K/W
C
th2 = tbd J/K; Rth2 = tbd K/W
D11-D16
C
th1 = tbd J/K; Rth1 = tbd K/W
C
th2 = tbd J/K; Rth2 = tbd K/W
Output Inverter T1 - T6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
1200
V
V
GES
Continuous
± 20
V
I
C25
T
C =
25°C
45
A
I
C80
T
C =
80°C
25
A
I
CM
T
C = 80°C; tp = 1 ms
50
A
P
tot
T
C = 25°C
170
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 25 A; VGE = 15 V; TVJ =
25°C
1.7
2.15
V
T
VJ = 125°C
2.0
V
V
GE(th)
I
C = 1 mA; VGE = VCE
5
5.8
6.5
V
I
CES
V
CE = VCES; VGE = 0 V; TVJ =
25°C
2.7
mA
T
VJ = 125°C
0.7
mA
I
GES
V
CE = 0 V; VGE = ± 20 V
400
nA
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
1.8
nF
Q
Gon
V
CE= 600 V; VGE = 15 V; IC = 25 A
240
nC
t
d(on)
90
ns
t
r
50
ns
t
d(off)
520
ns
t
f
90
ns
E
on
2.5
mJ
E
off
3.4
mJ
RBSOA
I
C = ICM; VGE =
±15 V
R
G = 36 ; TVJ = 125°C
V
CEK < VCES - LS di/dt
V
I
SC
V
CE = 720 V; VGE =
±15 V; R
G = 36 ;
100
A
(SCSOA)
t
p < 10 s; non-repetitive; TVJ = 125°C
R
thJC
(per IGBT)
0.73 K/W
Inductive load, T
VJ = 125°C
V
CE = 600 V; IC = 25 A
V
GE = ±15 V; RG = 36
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUBW25-12T7 | 功能描述:分立半導(dǎo)體模塊 25 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MUBW30-06A7 | 功能描述:分立半導(dǎo)體模塊 30 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MUBW30-12A6 | 功能描述:MODULE IGBT CBI E1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| MUBW30-12A6K | 功能描述:分立半導(dǎo)體模塊 30 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
| MUBW30-12E6K | 功能描述:分立半導(dǎo)體模塊 30 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝: |
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