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參數(shù)資料
| 型號(hào)： | MTY100N10E |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
| 中文描述： | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | CASE 340G-02, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 216K |
| 代理商： | MTY100N10E |
1
Motorola, Inc. 1995
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
100
Vdc
Drain–Gate Voltage (RGS = 1 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
100
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous @ TC = 25
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
IDM
100
300
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
300
2.38
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 100 Apk, L = 0.1 mH, RG = 25
)
250
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.42
40
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTY100N10E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
100 AMPERES
100 VOLTS
RDS(on) = 0.011 OHM
CASE 340G–02, STYLE 1
TO–264
Motorola Preferred Device
D
S
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTY10N100E | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
| MTY110A | 制造商:LIUJING 制造商全稱(chēng):LIUJING 功能描述:可控硅、晶閘管 |
| MTY14N100 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| MTY14N100E | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTY160A | 制造商:LIUJING 制造商全稱(chēng):LIUJING 功能描述:可控硅、晶閘管 |
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