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| 型號(hào)： | MTW7N80E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 800 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 107K |
| 代理商： | MTW7N80E |
MTW7N80E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
800
–
1,030
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 800 Vdc, VGS = 0 Vdc)
(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
–
3.0
7.0
4.0
–
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
RDS(on)
–
0.87
1.0
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 7.0 Adc)
(ID = 3.5 Adc, TJ = 125°C)
VDS(on)
–
6.8
–
10
10.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
gFS
4.0
7.63
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
3000
4160
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
244
490
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
–
46
90
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
20
40
ns
Rise Time
(VDD = 400 Vdc, ID = 7.0 Adc,
VGS =10Vdc
tr
–
37
85
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
84
165
Fall Time
RG 9.1 )
tf
–
49
105
Gate Charge
(See Figure 8)
QT
–
70
105
nC
(VDS = 400 Vdc, ID = 7.0 Adc,
VGS = 10 Vdc)
Q1
–
13
–
VGS = 10 Vdc)
Q2
–
28
–
Q3
–
23
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 7.0 Adc, VGS = 0 Vdc)
(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
0.817
0.7
1.14
–
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
–
651
–
ns
(See Figure 14)
(IS 7 0 Adc VGS 0 Vdc
ta
–
164
–
(IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
487
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
4.78
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
13
–
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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