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參數資料
| 型號： | MTW35N15E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
| 中文描述： | 35 A, 150 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數： | 3/8頁 |
| 文件大小： | 169K |
| 代理商： | MTW35N15E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
0
4.0
10
30
50
70
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2.0
4.0
6.0
8.0
0
10
30
50
70
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
50
70
0.01
0.03
0.06
0.08
0.09
R
0
50
70
0.035
0.039
0.047
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0
1.0
2.5
R
0
50
150
0.1
10
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
,
(
I
– 25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
100
°
C
25
°
C
TJ = 100
°
C
25
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
9.0 V
VGS = 10 V
VGS = 10 V
ID = 17.5 A
7.0 V
6.0 V
5.0 V
8.0 V
3.5
2.5
1.5
0.5
5.0
3.0
20
30
40
60
20
60
10
100
40
20
20
40
60
0.05
0.07
0.043
0.5
VGS = 10 V
TJ = 125
°
C
100
°
C
25
°
C
7.0
2.0
1.0
3.0
60
40
30
0.02
0.04
10
0.041
0.045
0.037
2.0
1.5
0
TJ = –55
°
C
–55
°
C
15 V
1.0
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