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參數(shù)資料
| 型號(hào)： | MTW24N40E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 24 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 168K |
| 代理商： | MTW24N40E |
MTW24N40E
http://onsemi.com
6
SAFE OPERATING AREA
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1.0
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
100
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
100
VGS =20 V
SINGLE PULSE
TC = 25°C
700
300
200
100
ID = 24 A
500
1.0
10
150
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0.2
0.02
0.1
D = 0.5
0.05
1.0E05
1.0E04
1.0E03
100 s
1 ms
10 ms
DC
400
600
0.01
1.0E02
1.0E01
1.0E+00
1.0E+01
0.1
1.0
0.001
0.01
SINGLE PULSE
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