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參數(shù)資料
| 型號(hào)： | MTW10N100E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
| 中文描述： | 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 192K |
| 代理商： | MTW10N100E |
5
Motorola TMOS Power MOSFET Transistor Device Data
QG, TOTAL GATE CHARGE (nC)
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
t
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
V
70
V
0
10
20
40
60
ID = 10 A
TJ = 25
°
C
VDS
Q1
Q2
QT
Q3
30
50
10
6
2
0
8
4
14
12
560
480
400
320
240
80
160
tr
tf
0.50
0.70
0.78
0.82
0
6
10
VGS = 0 V
TJ = 25
°
C
2
0.66
0.74
0
0.58
0.54
0.62
8
4
1
100
90
80
5
9
7
3
0.86
0.90
td(off)
td(on)
VGS
VDD = 500 V
ID = 10 A
VGS = 10 V
TJ = 25
°
C
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
μ
s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
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| MTW10N40E | TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
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| MTW45N10E | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
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| MTY14N100E | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW10N40E | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
| MTW14N50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM |
| MTW1551212 | 制造商:TDK-Lambda Corporation 功能描述:AC/DC Power Supply Triple-OUT 5V/12V/-12V 2A/0.3A/0.2A 16W 11-Pin 制造商:TDK-Lambda Corporation 功能描述:AC/DC PS TRIPLE-OUT 5V/12V/-12V 2A/0.3A/0.2A 16W 13PIN - Bulk 制造商:TDK 功能描述:AC/DC CONVERT 5V +/-12V 15W 制造商:TDK-Lambda 功能描述:AC/DC Power Supply Triple-OUT 5V/12V/-12V 2A/0.3A/0.2A 16W 11-Pin |
| MTW15-51212 | 功能描述:線性和開(kāi)關(guān)式電源 16W 5V 12V 2A -12V/0.2A RoHS:否 制造商:TDK-Lambda 產(chǎn)品:Switching Supplies 開(kāi)放式框架/封閉式:Enclosed 輸出功率額定值:800 W 輸入電壓:85 VAC to 265 VAC 輸出端數(shù)量:1 輸出電壓（通道 1）:20 V 輸出電流（通道 1）:40 A 商用/醫(yī)用: 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風(fēng)格:Rack 長(zhǎng)度: 寬度: 高度: |
| MTW1551212/V | 制造商:TDK-Lambda Corporation 功能描述:5V, 12, -12V - Bulk |
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