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參數(shù)資料
| 型號： | MTV16N50E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM |
| 中文描述： | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 276K |
| 代理商： | MTV16N50E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
—
—
520
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
250
1000
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.2
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 8.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 16 Adc)
(VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.32
0.40
Ohm
—
—
—
—
6.7
5.6
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)
gFS
5.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
3200
4480
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
400
560
Transfer Capacitance
—
320
448
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 4.7
)
td(on)
tr
td(off)
tf
—
28
60
ns
Rise Time
(VDD = 250 Vdc, ID = 16 Adc,
VGS = 10 Vdc,
—
80
160
Turn–Off Delay Time
—
80
160
Fall Time
—
60
120
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
65
—
nC
(VDS = 400 Vdc, ID = 16 Adc,
—
17
—
—
47
—
—
34
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 16 Adc, VGS = 0 Vdc)
(IS = 16 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.0
0.9
1.6
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
—
390
—
ns
(IS = 16 Adc, VGS = 0 Vdc,
—
245
—
tb
—
145
—
Reverse Recovery Stored Charge
QRR
—
5.35
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
5.0
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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| MTV1-6PAL79 | 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 6 POS 1.27mm Solder RA Thru-Hole |
| MTV1-6PH003 | 制造商:ITT Interconnect Solutions 功能描述:Cable Assembly Pre-Wired Pigtail 0.457m 26AWG 6 POS Micro Strip PIN Crimp |
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| MTV1-6PH027-1 | 制造商:ITT Interconnect Solutions 功能描述:Conn Wire to Wire PIN 6 POS Crimp ST Cable Mount |
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