參數(shù)資料
型號(hào): MTP6N60
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
中文描述: N溝道增強(qiáng)模式功率MOS晶體管(不適用溝道增強(qiáng)模式功率MOSFET的)
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 153K
代理商: MTP6N60
MTP6N60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 1
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 1.2
I
D
MTP6N60
600 V
6.8 A
1
2
3
TO-220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
600
V
V
DGR
600
±
20
6.8
V
V
GS
V
I
D
A
I
D
4.2
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
30
A
125
W
Derating Factor
1
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1/9
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