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參數(shù)資料
| 型號： | MTP52N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM |
| 中文描述： | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MTP52N06VL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
R
R
(
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VGS = 10 V
8 V
7 V
5 V
4 V
3 V
100
80
70
60
40
30
20
10
0
2
0
1.0
5
3
2.5
VDS
≥
10 V
TJ = –55
°
C
100
°
C
25
°
C
VGS = 5 V
20
0
.030
0
40
60
80
100
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
.040
0
VGS = 5 V
10 V
VGS = 5 V
ID = 26 A
1.6
1.4
1
0.6
0.4
–50
–25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125
°
C
1
0
10
20
30
40
50
60
4
6
8
10
100
90
80
70
60
50
40
30
20
10
0
2
4
6
1.5
.020
.010
.030
.020
.010
20
40
60
80
110
100
10
100
°
C
175
1.8
110
90
50
1
3
5
7
9
110
3.5
4.5
5.5
0.5
30
10
50
70
90
110
.035
.025
.015
.005
10
30
50
70
90
1.2
0.8
6 V
.060
.050
.040
100
0.2
0
1000
.070
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| MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM |
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| MTP55N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
| MTP55N06Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
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