型號: | MTP50N06ES |
廠商: | MOTOROLA INC |
元件分類: | JFETs |
英文描述: | 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
文件頁數(shù): | 1/2頁 |
文件大?。?/td> | 66K |
代理商: | MTP50N06ES |
相關PDF資料 |
PDF描述 |
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MTP2N60EA | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP3N50EAJ | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP20N20ES | 20 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP5N40EN | 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP12P10W | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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MTP50N06V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
MTP50N06V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
MTP50N06VL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(3+Tab) TO-220AB Rail |
MTP50P03HDL | 功能描述:MOSFET 30V 50A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
MTP50P03HDLG | 功能描述:MOSFET PFET T0220 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |