參數(shù)資料
型號(hào): MTP3N60E
廠商: ON SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: 3 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 183K
代理商: MTP3N60E
MTP3N60E
6
Motorola TMOS Power MOSFET Transistor Device Data
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 16. Capacitance Variation
C,
CAP
ACIT
ANCE
(pF)
VGS
VDS
VGS = 0 V
0
Ciss
Coss
Crss
1600
1400
1200
25
20
10
0
5
10
Figure 17. Gate Charge versus
Gate–To–Source Voltage
Qg, TOTAL GATE CHARGE (nC)
16
0
010
12
8
4
20
30
40
1000
Figure 18. Gate Charge Test Circuit
Vin
15 V
100 k
47 k
2N3904
1 mA
+18 V
VDD
10 V
100 k
0.1
F
100
FERRITE
BEAD
DUT
SAME
DEVICE TYPE
AS DUT
Vin = 15 Vpk; PULSE WIDTH ≤ 100 s, DUTY CYCLE ≤ 10%
5
15
800
600
VDS = 100 V
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
TJ = 25°C
ID = 3 A
250 V
420 V
400
200
TJ = 25°C
VDS = 0 V
5
15
25
35
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