參數(shù)資料
型號(hào): MTP3N100E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
中文描述: 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 3/8頁
文件大?。?/td> 206K
代理商: MTP3N100E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
0
4
8
12
16
20
2
6
10
14
18
3
5 V
6 V
VDS
10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = –55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 10 V
15 V
2.8
3.4
VGS = 0 V
0
200
400
1
100
100000
100
300
600
500
25
°
C
100
°
C
TJ = 125
°
C
1.0
3.0
5.5
1
3
5
6
4
2
4.5
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 10 V
–50
0.4
0.8
1.2
2.0
2.4
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 1.5 A
4 V
5
1
1000
3.2
3.6
3.8
3.0
1.6
6
2
4
ID
5.6
2.0
4.0
6.0
5.0
10
1000
800
0
1.0
3.0
5.0
2.0
4.0
6.0
5.5
3
5
1
6
2
4
0
6.0
2.5
1.5
3.5
1.5
2.5
3.5
4.5
700
900
10000
VGS = 10 V
相關(guān)PDF資料
PDF描述
MTP3N120E TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM
MTP3N25E TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
MTP3N50E TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
MTP3N50 TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
MTP3N60E TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
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MTP3N120E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM
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