- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96097 > MTP30P06V (ON SEMICONDUCTOR) 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | MTP30P06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 204K |
| 代理商： | MTP30P06V |
MTP30P06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
62
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.6
5.3
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 15 Adc)
RDS(on)
0.067
0.08
W
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)
VDS(on)
2.0
2.9
2.8
Vdc
Forward Transconductance
(VDS = 8.3 Vdc, ID = 15 Adc)
gFS
5.0
7.9
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
1562
2190
pF
Output Capacitance
Coss
524
730
Transfer Capacitance
Crss
154
310
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 10 Vdc, RG = 9.1 W)
td(on)
14.7
30
ns
Rise Time
tr
25.9
50
TurnOff Delay Time
td(off)
98
200
Fall Time
tf
52.4
100
Gate Charge (See Figure 8)
(VDS = 48 Vdc, ID = 30 Adc, VGS = 10 Vdc)
QT
54
80
nC
Q1
9.0
Q2
26
Q3
20
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
2.3
1.9
3.0
Vdc
Reverse Recovery Time
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
175
ns
ta
107
tb
68
Reverse Recovery Stored Charge
QRR
0.965
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP35N06ZL | 35 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP36N06V | 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3N08L | 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3N10L | 3 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3N120E | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP30X | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Glass Passivated Three-Phase Bridge Rectifier, 30A |
| MTP336M060P1C | 制造商:Mallory Sonalert Products Inc 功能描述:Cap Tant Wet 33uF 60V 20% (5.72 X 19.76mm) Axial 7.2 Ohm 85°C |
| MTP337K010P1C | 制造商:Mallory 功能描述:WS733X010 MALLORY S5G3B |
| MTP33N10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP33N10E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。