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參數(shù)資料
| 型號： | MTP30P06 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| 中文描述： | TMOS是功率場效應晶體管60伏30安培的RDS（on）\u003d 0.080歐姆 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 191K |
| 代理商： | MTP30P06 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
6
8
10
0
10
20
30
60
Figure 1. On–Region Characteristics
ID
0
1
2
3
4
8
0
10
20
30
60
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
10
20
30
40
50
0
0.02
0.04
0.06
0.12
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
10
20
30
40
70
1
50
10
100
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 125
°
C
100
°
C
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 0 V
VGS = 10V
VGS = 10 V
40
50
12
7 V
6 V
5 V
4 V
8 V
9 V
40
50
5
6
7
0.08
0.1
60
60
R
0
10
20
30
40
60
0.04
0.05
0.08
ID, DRAIN CURRENT (AMPS)
15 V
TJ = 25
°
C
VGS = 10 V
0.06
0.07
50
R
(
–50
0
0.2
0.4
0.6
1.8
TJ, JUNCTION TEMPERATURE (
°
C)
–25
0
25
50
75
100
150
VGS = 10 V
ID = 15 A
0.8
1
1.2
1.4
1.6
125
175
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| MTP36N06 | TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM |
| MTP3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP30P06V | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTP30X | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Glass Passivated Three-Phase Bridge Rectifier, 30A |
| MTP336M060P1C | 制造商:Mallory Sonalert Products Inc 功能描述:Cap Tant Wet 33uF 60V 20% (5.72 X 19.76mm) Axial 7.2 Ohm 85°C |
| MTP337K010P1C | 制造商:Mallory 功能描述:WS733X010 MALLORY S5G3B |
| MTP33N10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
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