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參數(shù)資料
| 型號： | MTP3055VL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 201K |
| 代理商： | MTP3055VL |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTP3055VL/D
MTP3055VL
Preferred Device
Power MOSFET
12 Amps, 60 Volts, Logic
Level
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
GateSource Voltage
Continuous
Single Pulse (tp ≤ 50 μs)
VGS
VGSM
±15
± 20
Vdc
Vpk
Drain Current Continuous @ 25°C
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
12
8.0
42
Adc
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
PD
48
0.32
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 12 Apk, L = 1.0 mH, RG =25 Ω)
EAS
72
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
3.13
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
°C
12 AMPERES
60 VOLTS
RDS(on) = 180 mΩ
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP3055VL
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP3055VL
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP3055VL
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
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| MTP3055V | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3055VG | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP30P06V | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP35N06ZL | 35 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP3055VL | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 60V 12A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 12A, TO-220 |
| MTP3055VL_Q | 功能描述:MOSFET 60V Single N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP30N06VL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM |
| MTP30N08M | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP30P06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
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