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參數(shù)資料
| 型號(hào)： | MTP2N40E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | MTP2N40E |
MTP2N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VGS = 10 V
4
3.2
2.4
1.6
0.8
0
20
16
12
8
4
0
8 V
7 V
6 V
5 V
4
3
2
1
0
2
3
4
5
6
7
8
VDS ≥ 10 V
TJ = – 55°C
25
°C
100
°C
VGS = 10 V
TJ = 100°C
25
°C
– 55
°C
8
6
4
2
0
4
3
2
1
0
TJ = 25°C
VGS = 10 V
15 V
5
4.5
4
3.5
3
2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
VGS = 10 V
ID = 1 A
2.5
2
1.5
1
0.5
0
– 50
– 25
0
25
50
75
100
125
150
VGS = 0 V
1000
100
10
0
100
200
300
400
TJ = 25°C
TJ = 125°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP2N40 | 2 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N35 | 2 A, 350 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N45 | 2 A, 450 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N50 | 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3055A | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP2N45 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
| MTP2N50 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
| MTP2N50E | 制造商:Motorola Inc 功能描述: |
| MTP2N60 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
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