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參數(shù)資料
| 型號： | MTP29N15E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | MTP29N15E |
MTP29N15E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
10
20
60
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
28
0
30
50
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
020
0
0.10
0.14
020
10
60
0.07
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Drain Current and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.25
0
20
40
160
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
-55°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 14.5 A
35
40
60
15 V
-50
-25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
60
80
100°C
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
012
5
4
610
30
10
40
60
0.045
0.04
0.5
0
0.1
0.02
30
25°C
3
7
TJ = 25°C
8 V
9 V
4
20
25°C
30
50
40
0.05
0.055
0.06
0.065
7 V
6.5 V
VGS = 10 V
5.5 V
5 V
4.5 V
4 V
89
40
50
6 V
67
0.04
0.06
0.08
0.12
TJ = 100°C
25°C
-55°C
50
2.0
1.75
1.25
0.75
0.25
100
120
140
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