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參數(shù)資料
| 型號： | MTM15624 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, MINI5-G1, 5 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 299K |
| 代理商： | MTM15624 |
MTM15624
2
SJF00108AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
FET
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = –1 mA, VGS = 0
–20
V
Drain-source cutoff current
IDSS
VDS = –20 V, VGS = 0
–1.0
m
A
Gate-source cutoff current
IGSS
VGS = ±8 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = –1.0 mA, VDS = –10 V
– 0.4
– 0.85
–1.3
V
Drain-source ON resistance
RDS(on)
ID = –1 A, VGS = –4.0 V
100
130
mW
ID = – 0.5 A, VGS = –2.5 V
130
200
Forward transfer admittance
Yfs ID = –1.0 A, VDS = –10 V
3.0
S
Short-circuit input capacitance (Common source)
Ciss
VDS = –10 V, VGS = 0, f = 1 MHz
400
pF
Short-circuit output capacitance (Common source)
Coss
40
pF
Reverse transfer capacitance (Common source)
Crss
35
pF
Turn-on time *
ton
VDD = –10 V, VGS = 0 V to –4 V, ID = –1A
35
ns
Turn-off time *
toff
VDD = –10 V, VGS = –4 V to 0 V, ID = –1A
100
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ton , toff measurement circuit
VCC = 10 V
PW = 10 s
Duty Cycle ≤ 1%
ID = 1 A
RL = 10
VOUT
VIN
D
G
S
VIN
50
0 V
4 V
ton
toff
VIN
VOUT
10%
90%
SBD
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 700 mA
0.45
V
Reverse current
IR
VR = 20 V
200
m
A
Terminal capacitance
Ct
VR = 0, f = 1 MHz
100
pF
Reverse recovery time
trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W
7
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
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