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參數(shù)資料
| 型號： | MTD20P06HDLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 308K |
| 代理商： | MTD20P06HDLT4 |
MTD20P06HDL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
I DSS
,LEAKAGE
(nA)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
3
2
5
1
4
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0
10
20
30
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
1
3
5
6
VDS ≥ 5 V
100
°C
25
°C
VGS = 5 V
– 55
°C
25
°C
0
30
– 50
– 25
0
25
50
75
100
125
150
0
10
20
60
40
VGS = 0 V
TJ = 125°C
TJ = 100°C
TJ = 25°C
VGS = 5 V
ID = 7.5 A
2
4
10
50
30
VGS = 10 V
8 V
4 V
TJ = 25°C
100
°C
5
15
25
10
25
5
20
10 V
30
25
20
15
10
5
0
8
7
10
6
9
6 V
7 V
9 V
30
25
20
15
10
5
0
TJ = – 55°C
0.40
0.32
0.24
0.16
0.08
0
0.275
0.250
0.225
0.200
0.175
0.150
0.125
0.100
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
5 V
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