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參數(shù)資料
| 型號： | MTD20P06HDLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 86K |
| 代理商： | MTD20P06HDLT4 |
MTD20P06HDL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
I DSS
,LEAKAGE
(nA)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
03
25
14
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
010
20
30
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1
100
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
13
5
6
VDS ≥ 5 V
100
°C
25
°C
VGS = 5 V
55
°C
25
°C
030
50
25
0
25
50
75
100
125
150
0
10
20
60
40
VGS = 0 V
TJ = 125°C
TJ = 100°C
TJ = 25°C
VGS = 5 V
ID = 7.5 A
24
10
50
30
VGS = 10 V
8 V
4 V
TJ = 25°C
100
°C
515
15
25
10
25
520
10 V
30
25
20
15
10
5
0
8
710
69
6 V
7 V
9 V
30
25
20
15
10
5
0
TJ = 55°C
0.40
0.32
0.24
0.16
0.08
0
0.275
0.250
0.225
0.200
0.175
0.150
0.125
0.100
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
5 V
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