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參數(shù)資料
| 型號： | MTD20P03HDLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 244K |
| 代理商： | MTD20P03HDLT4 |
MTD20P03HDL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
I DSS
,LEAKAGE
(nA)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
3
2
5
1
4
0
8
16
24
40
Figure 1. On–Region Characteristics
0
8
24
32
40
Figure 2. Transfer Characteristics
0
8
16
28
40
0.06
0.08
0.12
0.14
0.16
0.06
0.08
0.12
0.16
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.8
0.9
1.0
1.1
1.3
1
100
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
32
1.0
2.0
3.0
4.0
5.0
5.5
VDS ≥ 5 V
100
°C
25
°C
0.10
VGS = 5 V
– 55
°C
25
°C
0
16
32
40
0.14
0.10
– 50
– 25
0
25
50
75
100
125
150
1.2
0
4
12
28
32
20
VGS = 0 V
TJ = 125°C
TJ = – 55°C
TJ = 100°C
TJ = 25°C
VGS = 5 V
ID = 10 A
1.5
2.5
3.5
4.5
10
8
24
16
VGS = 10 V
8 V
6 V
2.5 V
3 V
TJ = 25°C
4 V
3.5 V
4.5 V
5 V
100
°C
16
4
12
24
36
12
28
36
20
32
8
24
4
20
10 V
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