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參數(shù)資料
| 型號(hào)： | MTD20N06HDLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 293K |
| 代理商： | MTD20N06HDLT4 |
MTD20N06HDL
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
25
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
6.0
2.0
—
Vdc
mV/
°C
Static Drain–Source On–Resistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on)
—
0.045
0.037
0.070
0.045
Ohm
Drain–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
—
0.76
—
1.2
1.1
Vdc
Forward Transconductance (VDS = 4.0 Vdc, ID = 10 Adc)
gFS
6.0
12
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
863
1232
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
216
300
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
53
73
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDS = 30 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc,
RG = 9.1 )
td(on)
—
11
15
ns
Rise Time
(VDS = 30 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc,
RG = 9.1 )
tr
—
151
190
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 9.1 )
td(off)
—
34
35
Fall Time
G = 9.1 )
tf
—
75
98
Gate Charge
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc)
QT
—
14.6
22
nC
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc)
Q1
—
3.25
—
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc)
Q2
—
7.75
—
Q3
—
7.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.95
0.88
1.1
—
Vdc
Reverse Recovery Time
(IS = 20 Adc,
dIS/dt = 100 A/s)
trr
—
22
—
ns
(IS = 20 Adc,
dIS/dt = 100 A/s)
ta
—
12
—
(IS = 20 Adc,
dIS/dt = 100 A/s)
tb
—
34
—
Reverse Recovery Stored Charge
QRR
—
0.049
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06V | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06VT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD20P03 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
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