- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98046 > MTD20N03HDLT4 (MOTOROLA INC) 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MTD20N03HDLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 180K |
| 代理商： | MTD20N03HDLT4 |
MTD20N03HDL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
I DSS
,LEAKAGE
(nA)
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (Amps)
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
VGS, GATE–TO–SOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
0.4
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
0
10
20
40
Figure 1. On–Region Characteristics
0
10
20
30
40
Figure 2. Transfer Characteristics
016
32
40
0.020
0.028
0.036
0.044
0.052
0.020
0.028
0.036
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
0.8
1.0
1.2
1.8
1
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
30
VGS = 10 V
8 V
6 V
2.5 V
3 V
TJ = 25°C
4 V
1.0
1.8
2.6
3.4
4.6
4.2
5.0
VDS ≥ 10 V
100
°C
25
°C
VGS = 5 V
–55
°C
25
°C
016
24
32
40
0.032
0.024
– 50
– 25
0
25
50
75
100
125
150
1.4
0
6
12
24
30
18
VGS = 0 V
TJ = 125°C
TJ = – 55°C
TJ = 100°C
TJ = 25°C
VGS = 5 V
10 V
VGS = 5 V
ID = 10 A
1.4
2.2
3.0
3.8
100
10
100
°C
25
°C
3.5 V
4.5 V
5 V
1.6
824
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD20N06HD-1 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HD | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HD1 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HDLT4 | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HDT4 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N03HL | 制造商:Motorola Inc 功能描述:20N03HL |
| MTD20N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
| MTD20N06HDL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。