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參數(shù)資料
| 型號(hào)： | MTD1N50ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 131K |
| 代理商： | MTD1N50ET4 |
MTD1N50E
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
ID = 1 A
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
10
1.0
0.1
0.01
1000
10
1.0
0.1
50
40
30
20
0
25
50
75
100
125
150
1.0
0.1
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
100
10
100 s
10 s
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
D = 0.5
0.2
0.1
0.05
0.02
0.01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD1N50EG | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N50E1 | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1P40ET4 | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD1P40E | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20N03HDLT4 | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD1N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD1P50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
| MTD2001 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs |
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