參數(shù)資料
型號(hào)： MTD1302
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DPAK-3
文件頁(yè)數(shù)： 6/12頁(yè)
文件大小： 128K
代理商： MTD1302
MTD1302
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
1.0
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5.0
10
40
ID, DRAIN CURRENT (AMPS)
0.01
-25
-50
TJ, JUNCTION TEMPERATURE (°C)
3.0
2.0
1.0
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5.0
20
1000
100
10
1.0
0.1
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
0.4
0.8
1.2
10
20
30
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
50
25
10
30
15
I DSS
,LEAKAGE
(nA)
40
2.5
1.0
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
I D
,DRAIN
CURRENT
(AMPS)
0
1.5
2.0
5.0
30
,DRAIN-T
O-SOURCE
ON-RESIST
ANCE
(OHMS)
DS(on)
40
10
ID, DRAIN CURRENT (AMPS)
0.04
0.02
0.015
0.01
0.005
0
R
15
20
30
,DRAIN-T
O-SOURCE
ON-RESIST
ANCE
(OHMS)
DS(on)
TJ = 100°C
-55°C
25°C
TJ = 25°C
15
20
25
30
35
0.2
0.6
1.8
1.6
2.0
1.4
4.5
3.0
3.5
20
15
5.0
25
15
25
35
0.02
0.03
25
35
0.035
0.03
0.025
25
TJ = 25°C
VGS = 3.0 V
4.0 V
TJ = 125°C
25°C
-55°C
VGS = 10 V
10 V
VGS = 4.5 V
ID = 10 A
VGS = 10 V
VDS ≥ 10 V
TJ = 125°C
100°C
25°C
5.0 V
10 V
4.0
75
100
150
125
相關(guān)PDF資料
PDF描述
MTD1302-1 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1302T4 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1312T4 6 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1N50ET4 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1N50EG 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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