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參數(shù)資料
| 型號： | MTB75N06HDT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 342K |
| 代理商： | MTB75N06HDT4 |
MTB75N06HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
I DSS
,LEAKAGE
(nA)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
1
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
VDS ≥ 10 V
TJ = – 55°C
25
°C
– 50
– 25
0
25
50
75
100
125
150
0
10
20
60
40
VGS = 0 V
TJ = 125°C
VGS = 10 V
ID = 37.5 A
100
30
9 V
TJ = 25°C
100
°C
150
0
2
1.5
100
°C
1.9
1.6
1.3
1
0.7
2
5
4
7
3
6
8
125
100
75
50
25
VGS = 10 V
8 V
7 V
6 V
5 V
150
0
125
100
75
50
25
10
50
25
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
0
50
150
TJ = 25°C
25
75
15 V
0.016
0.012
0.009
0.007
0.006
0.014
0.012
0.010
0.008
0.006
0.004
100
125
TJ = 25°C
VGS = 10 V
TJ = 100°C
25
°C
– 55
°C
VGS = 10 V
0.010
0.008
0
50
150
25
75
100
125
0.011
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