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| 型號(hào)： | MTB75N05HDT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 240K |
| 代理商： | MTB75N05HDT4 |
MTB75N05HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
50
54.9
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
(VDS = 50 V, VGS = 0, TJ = 125°C)
IDSS
10
100
μAdc
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
6.3
4.0
Vdc
mV/°C
Static DraintoSource OnResistance (Note 3)
(VGS = 10 Vdc, ID = 20 Adc)
RDS(on)
7.0
9.5
mΩ
(ID = 75 A)
(ID = 20 Adc, TJ = 125°C)
VDS(on)
0.63
0.34
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 20 Adc)
gFS
15
mhos
DYNAMIC CHARACTERISTICS (Note 2)
Input Capacitance
(VDS = 25 V, VGS = 0, (Cpk ≥ 2.0)
f = 1.0 MHz)
(Cpk ≥ 2.0)
Ciss
2600
3900
pF
Output Capacitance
Coss
1000
1300
Transfer Capacitance
Crss
230
300
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 25 V, ID = 75 A,
VGS = 10 V,
RG = 9.1 Ω)
td(on)
15
30
ns
Rise Time
tr
170
340
TurnOff Delay Time
td(off)
70
140
Fall Time
tf
100
200
Gate Charge
(VDS = 40 V, ID = 75 A,
VGS = 10 V)
QT
71
100
nC
Q1
13
Q2
33
Q3
26
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(IS = 75 A, VGS = 0)
(Cpk ≥ 10)
(IS = 20 A, VGS = 0)
(IS = 20 A, VGS = 0, TJ = 125°C)
VSD
0.97
0.80
0.68
1.00
Vdc
Reverse Recovery Time
(IS = 37.5 A, VGS = 0,
dIS/dt = 100 A/μs)
trr
57
ns
ta
40
tb
17
Reverse Recovery Stored Charge
QRR
0.17
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Reflects Typical Values. Cpk = Absolute Value of (SPEC AVG) / 3 * SIGMA).
3. For accurate measurements, good Kelvin contact required.
4. Switching characteristics are independent of operating junction temperature.
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